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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP140/D
Darlington Complementary Silicon Power Transistors
. . . designed for general-purpose amplifier and low frequency switching applications. * High DC Current Gain -- Min hFE = 1000 @ IC = 5 A, VCE = 4 V * Collector-Emitter Sustaining Voltage -- @ 30 mA VCEO(sus) = 60 Vdc (Min) -- TIP140, TIP145 VCEO(sus) = 80 Vdc (Min) -- TIP141, TIP146 VCEO(sus) = 100 Vdc (Min) -- TIP142, TIP147 * Monolithic Construction with Built-In Base-Emitter Shunt Resistor
MAXIMUM RATINGS
Rating
TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147*
*Motorola Preferred Device
NPN
II II IIIIIIIIIIIIIIIIIIIIIIII I II II I I IIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII II III I II IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIII I II III I I II II IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I II I I II I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII III I I I I I I II I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII
Symbol VCEO VCB VEB IC IB TIP140 TIP145 60 60 TIP141 TIP146 80 80 TIP142 TIP147 100 100 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 10 15 Collector Current -- Continuous Peak (1) Base Current -- Continuous Total Device Dissipation @ TC = 25_C 0.5 PD 125 Watts Operating and Storage Junction Temperature Range TJ, Tstg - 65 to + 150
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 125 WATTS
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol RJC RJA
Max 1.0
Unit
Thermal Resistance, Junction to Case Thermal Resistance, Case to Ambient
_C/W _C/W
(1) 5 ms,
v 10% Duty Cycle.
35.7
CASE 340D-02
DARLINGTON SCHEMATICS
NPN TIP140 TIP141 TIP142 BASE
COLLECTOR
PNP TIP145 TIP146 TIP147 BASE
COLLECTOR
8.0 k
40
8.0 k
40
EMITTER
EMITTER
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
(c) Motorola, Inc. 1996 Motorola Bipolar Power Transistor Device Data
1
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
t, TIME ( s)
I I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII I I I IIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I I IIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIII I I I IIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Collector-Emitter Sustaining Voltage (1) (IC = 30 mA, IB = 0) VCEO(sus) Vdc TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 60 80 100 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 V, IE = 0) (VCB = 80 V, IE = 0) (VCB = 100 V, IE = 0) ICEO mA 2.0 2.0 2.0 1.0 1.0 1.0 20 ICBO mA Emitter Cutoff Current (VBE = 5.0 V) IEBO mA ON CHARACTERISTICS (1) DC Current Gain (IC = 5.0 A, VCE = 4.0 V) (IC = 10 A, VCE = 4.0 V) hFE -- 1000 500 -- -- -- -- -- -- -- -- -- -- -- -- Collector-Emitter Saturation Voltage (IC = 5.0 A, IB = 10 mA) (IC = 10 A, IB = 40 mA) Base-Emitter Saturation Voltage (IC = 10 A, IB = 40 mA) Base-Emitter On Voltage (IC = 10 A, VCE = 4.0 Vdc) VCE(sat) Vdc 2.0 3.0 3.5 3.0 VBE(sat) VBE(on) Vdc Vdc SWITCHING CHARACTERISTICS Resistive Load (See Figure 1) Delay Time Rise Time td tr -- -- -- -- 0.15 0.55 2.5 2.5 -- -- -- -- s s s s Storage Time Fall Time (VCC = 30 V, IC = 5.0 A, V 50A IB = 20 mA Duty Cycle mA, 2 0% 2.0%, IB1 = IB2, RC & RB Varied, TJ = 25_C) , )
v
ts tf
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle
v 2.0%.
10 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA RC MSD6100 USED BELOW IB 100 mA TUT
V2 approx +12 V 0 V1 appox. - 8.0 V tr, tf 10 ns DUTY CYCLE = 1.0% 51 RB D1 + 4.0 V 25 s
for td and tr, D1 is disconnected and V2 = 0
VCC - 30 V
5.0
SCOPE
PNP NPN ts
2.0 tf 1.0 0.5 tr td @ VBE(off) = 0 0.2 0.1 0.2 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 10 20
8.0 k
40
0.5
For NPN test circuit reverse diode and voltage polarities.
1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP)
Figure 1. Switching Times Test Circuit
Figure 2. Switching Times
2
Motorola Bipolar Power Transistor Device Data
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
TYPICAL CHARACTERISTICS
NPN TIP140, TIP141, TIP142
20,000 5000 hFE , DC CURRENT GAIN TJ = 150C hFE , DC CURRENT GAIN 100C 25C - 55C 1000 10,000 7000 5000 3000 2000 VCE = 4.0 V 7.0 10 1000 0.5 0.7 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (AMPS) 7.0 10 - 55C TJ = 150C 100C 25C
PNP TIP145, TIP146, TIP147
2000
500 300 0.5
VCE = 4.0 V 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain versus Collector Current
VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)
5.0
5.0
3.0 2.0
3.0 2.0 IC = 10 A, IB = 4.0 mA
IC = 10 A, IB = 4.0 mA
IC = 5.0 A, IB = 10 mA 1.0 IC = 1.0 A, IB = 2.0 mA 0.7 0.5 - 75 - 50 - 25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) 150 175
IC = 5.0 A, IB = 10 mA 1.0 0.7 0.5 - 75 - 50 - 25 IC = 1.0 A, IB = 2.0 mA
0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C)
150
175
Figure 4. Collector-Emitter Saturation Voltage
VBE, BASE-EMITTER VOLTAGE (VOLTS)
3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 - 75 - 25 25 75
VBE, BASE-EMITTER VOLTAGE (VOLTS)
4.0 VCE = 4.0 V
4.0 3.6 3.2 2.8 2.4 IC = 10 A 2.0 1.6 1.2 0.8 - 75 - 25 25 75 125 5.0 A 1.0 A 175 VCE = 4.0 V
IC = 10 A 5.0 A 1.0 A 125 175
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 5. Base-Emitter Voltage
Motorola Bipolar Power Transistor Device Data
3
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
ACTIVE-REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
20 IC, COLLECTOR CURRENT (AMP) (mA) 10 7.0 5.0 3.0 2.0 1.0 dc TJ = 150C SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITATION @ TC = 25C TIP140, 145 TIP141, 146 TIP142, 147 20 30 50 15 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) 15 10 7.0 5.0 100 mJ
The data of Figure 6 is based on T J(pk) = 150_C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
2.0
0.2 10
1.0 100 0.5 1.0 2.0 5.0 10 20 L, UNCLAMPED INDUCTIVE LOAD (mH) 50 100
Figure 6. Active-Region Safe Operating Area
VCE MONITOR MPS-U52 RBB1 INPUT 50 50 1.5 k RBB2 = 100 VBB2 = 0 VBB1 = 10 V 100 mH TUT VCC = 20 V IC MONITOR RS = 0.1
Figure 7. Unclamped Inductive Load
w 7.0 ms (SEE NOTE 1) 5.0 V 0 100 ms 0
INPUT VOLTAGE COLLECTOR CURRENT 1.42 A VCE(sat) - 20 V COLLECTOR VOLTAGE V(BR)CER
TEST CIRCUIT
NOTE 1: Input pulse width is increased until ICM = 1.42 A. NOTE 2: For NPN test circuit reverse polarities.
VOLTAGE AND CURRENT WAVEFORMS
Figure 8. Inductive Load
100 70 50 PNP 20 10 7.0 5.0 NPN PNP NPN 5.0 PD, POWER DISSIPATION (WATTS) VCE = 10 V IC = 1.0 A TJ = 25C
hfe , SMALL-SIGNAL FORWARD CURRENT TRANSFER RATIO
4.0
3.0
2.0
2.0 1.0 1.0
1.0 0
2.0
3.0 5.0 f, FREQUENCY (MHz)
7.0
10
0
40
80 120 160 TA, FREE-AIR TEMPERATURE (C)
200
Figure 9. Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio 4
Figure 10. Free-Air Temperature Power Derating
Motorola Bipolar Power Transistor Device Data
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
PACKAGE DIMENSIONS
C B Q E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX --- 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --- 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX --- 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --- 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069
U S K L
1 2
4
A
3
D V G
J H
DIM A B C D E G H J K L Q S U V
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
CASE 340D-02 ISSUE B
Motorola Bipolar Power Transistor Device Data
5
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
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6
Motorola Bipolar Power Transistor Device Data TIP140/D
*TIP140/D*

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